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参数资料
| 型号： | 2SK4069-ZK-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V MP-3ZK/TO-252 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 12V |
| 输入电容 (Ciss) @ Vds： | 860pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252（MP-3Z） |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4069
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
? Low on-state resistance
R DS(on)1 = 12 m Ω MAX. (V GS = 10 V, I D = 15 A)
? Low Q GD : Q GD = 3.2 nC TYP.
? 4.5 V drive available
ORDERING INFORMATION
PART NUMBER
PACKAGE
(TO-251)
<R>
2SK4069(1)-S27-AY
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
Note
Note
Note
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
(TO-252)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
25
±20
±30
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
±120
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
21
1.0
150
? 55 to +150
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
18
32.4
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 12 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18032EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4069-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK4070 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070(1)-S27-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-S15-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4070-ZK-E1-AY | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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