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参数资料
| 型号： | 3LN01C-TB-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 150MA 3CP |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 150mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 欧姆 @ 80mA，4V |
| 闸电荷(Qg) @ Vgs： | 1.58nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7pF @ 10V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-CP |
| 包装： | 带卷 (TR) |
Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7 Ω , Single CP
Features
http://onsemi.com
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Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±10
0.15
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
0.6
0.25
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7013A-013
Device
3LN01C-TB-E
Package
CP
SC-59, TO-236,
SOT-23, TO-236AB
Shipping
3,000
pcs./reel
memo
Pb-Free
2.9
3
0.1
3LN01C-TB-E
3LN01C-TB-H
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
Pb-Free
and
Halogen Free
1
0.95
2
0.4
Packing Type: TB
Marking
1 : Gate
2 : Source
3 : Drain
CP
TB
Electrical Connection
YA
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
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