参数资料
型号: 48e30
厂商: Holtek Semiconductor Inc.
英文描述: 8-Bit I/O Type MCU (With EEPROM)
中文描述: 8位I / O型微控制器(带EEPROM)
文件页数: 23/44页
文件大小: 351K
代理商: 48E30
Pad Description
Pad Name
I/O
Options
Description
PA0~PA7
I/O
Pull-high*
Wake-up
CMOS/Schmitt trigger
Input
Bidirectional 8-bit input/output port. Each bit can be configured as a
wake-up input by options. Software instructions determine the CMOS
output or Schmitt trigger or CMOS input (depends on options) with
pull-high resistor (determined by 1-bit pull-high options).
PB0/BZ
PB1/BZ
PB2~PB7
I/O
Pull-high*
PB0 or BZ
PB1 or BZ
Bidirectional 8-bit input/output port. Software instructions determine the
CMOS output or Schmitt trigger input with pull-high resistor (deter-
mined by pull-high options).
The PB0 and PB1 are pin-shared with the BZ and BZ, respectively.
Once the PB0 or PB1 is selected as buzzer driving outputs, the output
signals come from an internal PFD generator (shared with timer/event
counter).
VSS
Negative power supply, ground
PG0/INT
I/O
Pull-high*
Bidirectional I/O lines. Software instructions determine the CMOS out-
put or Schmitt trigger input with pull-high resistor (determined by 1-bit
pull-high options). This external interrupt input is pin-shared with PG0.
The external interrupt input is activated on a high to low transition.
PC0/TMR
PC1~PC5
I/O
Pull-high*
Bidirectional I/O lines. Software instructions determine the CMOS out-
put or Schmitt trigger input with pull-high resistor (determined by 1-bit
pull-high options). The timer input are pin-shared with PC0.
RES
I
Schmitt trigger reset input. Active low.
VDD
Positive power supply
OSC1
OSC2
I
O
Crystal or RC
OSC1and OSC2 are connected to an RC network or Crystal (deter-
mined by options) for the internal system clock. In the case of RC oper-
ation, OSC2 is the output terminal for 1/4 system clock.
Note:
* The pull-high resistors of each I/O port (PA, PB, PC, PG) are controlled by a 1-bit option.
CMOS or Schmitt trigger option of port A is controlled by a 1-bit option.
Absolute Maximum Ratings
Supply Voltage ...........................VSS
-0.3V to VSS+6.0V
Storage Temperature ............................
-50°Cto125°C
Input Voltage..............................VSS
-0.3V to VDD+0.3V
Operating Temperature...........................
-40°Cto85°C
Note: These are stress ratings only. Stresses exceeding the range specified under
Absolute Maximum Ratings may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
HT48E30
Rev. 0.00
3
January 12, 2004
Preliminary
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