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参数资料
| 型号： | 5962D0153301QXX |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, QMA68 |
| 封装： | DUAL CAVITY, CERAMIC, QFP-68 |
| 文件页数： | 11/14页 |
| 文件大小： | 124K |
| 代理商： | 5962D0153301QXX |
6
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40
°C to +125°C) (V
DD = 3.3V + 0.3)
Notes: * Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 30 0mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge ofEn. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
tAVAV
1
Read cycle time
35
ns
t
AVQV
Read access time
35
ns
tAXQX
2
Output hold time
3
ns
tGLQX
2
G-controlled Output Enable time
3
ns
tGLQV
G-controlled Output Enable time (Read Cycle 3)
10
ns
tGHQZ
2
G-controlled output three-state time
10
ns
t
ETQX
2,3
En-controlled Output Enable time
3
ns
t
ETQV
3
En-controlled access time
35
ns
tEFQZ
1,2,4
En-controlled output three-state time
10
ns
{
}
VLOAD + 300mV
VLOAD - 300mV
VLOAD
VH - 300mV
VL + 300mV
Active to High Z Levels
High Z to Active Levels
Figure 3. 3-Volt SRAM Loading
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