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参数资料
| 型号： | 5962D0153301QXX |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, QMA68 |
| 封装： | DUAL CAVITY, CERAMIC, QFP-68 |
| 文件页数： | 3/14页 |
| 文件大小： | 124K |
| 代理商： | 5962D0153301QXX |
11
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data Rentention Test)
Notes:
1. En = VDD - .2V, all other inputs = V DR or VSS.
2. Data retention current (IDDR) Tc = 25
oC.
3. Not guaranteed or tested.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, TC=-40
oC to +125oC)
Notes:
1. Performed at VDD (min) and VDD (max).
2. En = VSS, all other inputs = V DR or VSS.
3. Not guaranteed or tested.
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
V
DR
V
DD for data retention
2.0
--
V
I
DDR
1 ,2
Data retention current (per byte)
--
2.0
mA
tEFR
1,3
Chip select to data retention time
0
ns
tR
1 ,3
Operation recovery time
t
AVAV
ns
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
VDD
1
V
DD for data retention
3.0
3.6
V
tEFR
2, 3
Chip select to data retention time
0
ns
t
R
2, 3
Operation recovery time
tAVAV
ns
VDD
DATA RETENTION MODE
t
R
50%
VDR > 2.0V
Figure 7. Low VDD Data Retention Waveform
tEFR
En
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