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参数资料
| 型号： | A1361LKTTN-T |
| 元件分类： | 磁阻传感器 |
| 英文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 4.65-4.80V, RECTANGULAR, THROUGH HOLE MOUNT |
| 封装： | LEAD FREE, PLASTIC, SIP-4 |
| 文件页数： | 7/25页 |
| 文件大小： | 615K |
| 代理商： | A1361LKTTN-T |
A1360, A1361,
and A1362
Programming Pulse Requirements, protocol at TA = 25°C
Characteristic
Symbol
Notes
Min.
Typ.
Max.
Units
Programming Voltage
VP(LOW)
Measured at the VOUT pin.
–
5.5
V
VP(MID)
14
15
16
V
VP(HIGH)
26
27
28
V
Programming Current
IP
Minimum supply current required to ensure proper
fuse blowing. In addition, a minimum capacitance,
CBLOW = 0.1 μF, must be connected between the
VOUT and GND pins during programming, to provide
the current necessary for fuse blowing.
300
–
mA
Pulse Width
tLOW
Duration of VP(LOW) voltage level for separating
VP(MID) and VP(HIGH) pulses, and delay time after the
final VBLOW pulse.
40
–
μs
tACTIVE
Duration of VP(MID) and VP(HIGH) pulses for register
selection or bit field addressing.
40
–
μs
tBLOW
Duration of VP(HIGH) pulses for fuse blowing.
40
–
μs
Pulse Rise Time
tPr
Rise time required for transitions from VP(LOW) to
either VP(MID) or VP(HIGH).
5
–
100
μs
Pulse Fall Time
tPf
Fall time required for transitions from VP(HIGH) or
VP(MID) to VP(LOW).
5
–
100
μs
Zone The 136x programming logic is designed to accept up to
two different key-code combinations sequentially without cycling
the supply. The first key-code combination is interpreted as
addressing a register in the first zone, and the second key-code
combination is interpreted as addressing a register in the second
zone. All of the parameter registers are located in either the first
or second zone. The first zone must be entered and exited before
the parameter registers available in the second zone may be
accessed.
Fuse Blowing Applying a high voltage pulse of sufficient dura-
tion to permanently set an addressed bit by blowing a fuse
internal to the device. After a bit (fuse) has been blown, it cannot
be reset.
Blow Pulse A high voltage pulse of sufficient duration to blow the
addressed fuse.
Cycling the Supply Powering-down, and then powering-up the
supply voltage. Cycling the supply is used to clear the program-
ming settings in Try mode.
Low-Noise Programmable Linear Hall Effect Sensor ICs with
Adjustable Bandwidth (50 kHz Maximum) and Analog Output
15
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| A1362LKTTN-T | 功能描述:IC HALL EFFECT SENSOR LN 4-SIP RoHS:是 类别:传感器，转换器 >> 磁性 - 霍尔效应，数字式开关，线性，罗盘 (IC) 系列:- 标准包装:1 系列:- 传感范围:20mT ~ 80mT 类型:旋转 电源电压:4.5 V ~ 5.5 V 电流 - 电源:15mA 电流 - 输出（最大）:- 输出类型:数字式，PWM，8.5 位串行 特点:可编程 工作温度:-40°C ~ 150°C 封装/外壳:20-SSOP（0.209"，5.30mm 宽） 供应商设备封装:20-SSOP 包装:Digi-Reel® 其它名称:AS5132-HSST-500DKR |
| A1363LKTTN-10-T | 功能描述:IC HALL SENSOR 6.4-14MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带（CT） 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源（最大值）:15mA 电流 - 输出（最大值）:10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C（TA） 特性:可编程，温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1 |
| A1363LKTTN-1-T | 功能描述:IC HALL SENSOR 0.6-1.3MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带（CT） 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源（最大值）:15mA 电流 - 输出（最大值）:10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C（TA） 特性:可编程，温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:模块 标准包装:1 |
| A1363LKTTN-2-T | 功能描述:IC HALL SENSOR 1.3-2.9MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带（CT） 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源（最大值）:15mA 电流 - 输出（最大值）:10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C（TA） 特性:可编程，温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1 |
| A1363LKTTN-5-T | 功能描述:IC HALL SENSOR 2.9-6.4MV/G 4SIP 制造商:allegro microsystems, llc 系列:- 包装:剪切带（CT） 零件状态:有效 类型:线性 技术:霍尔效应 轴:单路 感应范围:- 电压 - 电源:4.5 V ~ 5.5 V 电流 - 电源（最大值）:15mA 电流 - 输出（最大值）:10mA 输出类型:模拟电压 分辨率:- 带宽:120kHz 工作温度:-40°C ~ 150°C（TA） 特性:可编程，温度补偿 封装/外壳:4-SIP 模块 供应商器件封装:4-SIP 标准包装:1 |
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