参数资料
型号: A3985SLDTR-T
厂商: Allegro Microsystems Inc
文件页数: 5/15页
文件大小: 0K
描述: IC MOSFET DRVR PROG DUAL 38TSSOP
标准包装: 1
配置: 半桥
输入类型: 非反相
延迟时间: 120ns
配置数: 2
输出数: 8
电源电压: 12 V ~ 50 V
工作温度: -20°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 38-TFSOP(0.173",4.40mm 宽)
供应商设备封装: 38-TSSOP
包装: 标准包装
产品目录页面: 1141 (CN2011-ZH PDF)
其它名称: 620-1180-6
A3985
Digitally Programmable
Dual Full-Bridge MOSFET Driver
ELECTRICAL CHARACTERISTICS , continued, at T A = 25°C, V DD = 5 V, V BB = 12 to 50 V, unless noted otherwise
Characteristics Symbol Test Conditions Min. Typ. Max.
Current Control
Units
Blank Time t BLANK
Fixed Off-Time t OFF
Reference Input Voltage V REF
Internal Reference Voltage V REFInt
f MCK = 4 MHz;
Word1:Bits D1 and D2 = 00
f MCK = 4 MHz,
Word1:Bits D3 to D7 = 01010, and
D15 = 0
20 k Ω to V DD
– 1 –
21.75 – 22
0.8 – 2
1.9 2.0 2.1
μ s
μ s
V
V
Current Trip Point Error
2
E ITrip
V REF = 2 V – – ±5
%
Reference Input Current 1
I REF
–3 0 3
μ A
Internal Oscillator Frequency f OSC
R OSC = 10 k Ω
3.2 4 4.8
MHz
Maximum Clock Input Frequency f EXTmax
Master Clock Frequency f MCK
Protection
External clock selected – 10 –
0.5 4 5
MHz
MHz
VREG Undervoltage Lockout V REGUV
Decreasing V REG
7.5 8 8.5
V
VREG Undervoltage Lockout
Hysteresis
V REGUVHys
100 200 –
mV
VDD Undervoltage Lockout V DDUV
Decreasing V DD
2.45 2.7 2.95
V
VDD Undervoltage Lockout
Hysteresis
V DDUVHys
50 100 –
mV
Overtemperature Shut Down T TSD
Temperature increasing – 165 –
oC
Overtemperature Shut Down
Hysteresis
T TSDHys
Recovery = T TSD – T TSDHys
– 15 –
oC
Continued on the next page...
THERMAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions*
Value Units
Package Thermal Resistance
R θ JA
4-layer PCB, based on JEDEC standard
1-layer PCB with copper limited to solder pads
51
127
oC/W
oC/W
*Additional thermal information available on Allegro Web site.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
5
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