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参数资料
| 型号： | A63L73321SERIES |
| 元件分类： | 通用总线功能 |
| 英文描述： | 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output |
| 中文描述： | 128K的× 32位同步计数器高的Burst SRAM的速度和流量，通过数据输出 |
| 文件页数： | 9/17页 |
| 文件大小： | 270K |
| 代理商： | A63L73321SERIES |
A63L73321 Series
PRELIMINARY (June, 1999, Version 0.1)
8
AMIC Technology, Inc.
DC Electrical Characteristics
(0
°
C
≤
T
A
≤
70
°
C, VCC, VCCQ = 3.3V+10% or 3.3V-5%, unless otherwise noted)
Symbol
Parameter
Min.
Max.
Unit
Test Conditions
Note
I
LI
Input Leakage Current
-
±
2.0
μ
A
All inputs V
IN
= GND to VCC
I
LO
Output Leakage Current
-
±
2.0
μ
A
OE
= V
IH
, Vout = GND to VCC
I
CC1
Supply Current
-
350
mA
Device selected; VCC = max.
Iout = 0mA, all inputs = V
IH
or V
IL
Cycle time = t
KC
min.
3, 11
I
SB1
Standby Current
-
25
mA
Device deselected; VCC = max.
All inputs are fixed.
All inputs
≥
VCC - 0.2V
or
≤
GND + 0.2V
Cycle time = t
KC
min.
11
I
SB2
-
10
mA
ZZ
≥
VCC - 0.2V
V
OL
Output Low Voltage
-
0.4
V
I
OL
= 8 mA
V
OH
Output High Voltage
2.4
-
V
I
OH
= -4 mA
Capacitance
Symbol
Parameter
Typ.
Max.
Unit
Conditions
C
IN
Input Capacitance
3
4
pF
T
A
= 25 C; f = 1MHz
VCC = 3.3V
C
I/O
Input/Output Capacitance
4
5
pF
* These parameters are sampled and not 100% tested.
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