参数资料
型号: ADN2526ACPZ-R7
厂商: Analog Devices Inc
文件页数: 15/16页
文件大小: 0K
描述: IC LASER DRIVER 11.3GBPS 16LFCSP
标准包装: 1,500
类型: 激光二极管驱动器
数据速率: 11.3Gbps
通道数: 1
电源电压: 3 V ~ 3.6 V
电流 - 电源: 46mA
电流 - 调制: 80mA
电流 - 偏置: 100mA
工作温度: -40°C ~ 85°C
封装/外壳: 16-VFQFN 裸露焊盘,CSP
供应商设备封装: 16-LFCSP-VQ
包装: 带卷 (TR)
安装类型: 表面贴装
Data Sheet
DESIGN EXAMPLE
This design example covers:
? Headroom calculations for the IBIAS, IMODP, and
IMODN pins.
ADN2526
V LB is the dc voltage drop across L1, L2, L3, and L4. Assuming
that V LB = 0 V and IMOD = 60 mA, the minimum voltage at the
modulation output pins is equal to
VCC ? ( IMOD × 25)/2 = VCC ? 0.75
?
Calculation of the typical voltage required at the BSET and
VCC ? 0.75 > VCC ? 1.1 V, which satisfies the requirement.
MSET pins to produce the desired bias and modulation
currents.
This design example assumes that the resistance of the TOSA is
25 ?, the forward voltage of the laser at low current is V F = 1 V,
IBIAS = 40 mA, IMOD = 60 mA, and VCC = 3.3 V.
Headroom Calculations
To ensure proper device operation, the voltages on the IBIAS,
IMODP, and IMODN pins must meet the compliance voltage
specifications in Table 1.
Considering the typical application circuit shown in Figure 34,
the voltage at the IBIAS pin can be written as
V IBIAS = VCC ? V F ? ( IBIAS × R TOSA ) ? V LA
The maximum voltage at the modulation pins is equal to
VCC + ( IMOD × 25)/2 = VCC + 0.75
VCC + 0.75 < VCC + 1.1 V, which satisfies the requirement.
Headroom calculations must be repeated for the minimum and
maximum values of the required IBIAS and IMOD ranges to
ensure proper device operation over all operating conditions.
BSET and MSET Pin Voltage Calculation
To set the desired bias and modulation currents, the BSET and
MSET pins of the ADN2526 must be driven with the appropriate
dc voltage. The voltage range required at the BSET pin to generate
the required IBIAS range can be calculated using the BSET voltage
to IBIAS gain specified in Table 1. Assuming that IBIAS = 40 mA
V BSET =
IBIAS (mA) 40
V MSET =
where:
VCC is the supply voltage.
V F is the forward voltage across the laser at low current.
R TOSA is the resistance of the TOSA.
V LA is the dc voltage drop across L5, L6, L7, and L8.
For proper operation, the minimum voltage at the IBIAS pin
should be greater than 0.6 V, as specified by the minimum
IBIAS compliance specification in Table 1.
Assuming that the voltage drop across the 25 ? transmission
lines is negligible and that V LA = 0 V, V F = 1 V, and IBIAS =
40 mA
V IBIAS = 3.3 ? 1 ? (0.04 × 25) = 1.3 V
V IBIAS = 1.3 V > 0.6 V, which satisfies the requirement.
The maximum voltage at the IBIAS pin must be less than the
maximum IBIAS compliance specification as described by
V COMPLIANCE_MAX = VCC ? 0.75 ? 4.4 × IBIAS
For this example,
(2)
and the typical IBIAS/V BSET ratio of 100 mA/V, the BSET voltage
is given by
= = 0 . 4 V
100 mA/V 100
The BSET voltage range can be calculated using the required
IBIAS range and the minimum and maximum BSET voltage to
IBIAS gain values specified in Table 1.
The voltage required at the MSET pin to produce the desired
modulation current can be calculated using
IMOD
K
where K is the MSET voltage to IMOD ratio.
The value of K depends on the actual resistance of the TOSA.
It can be read using the plot shown in Figure 29. For a TOSA
resistance of 25 ?, the typical value of K is equal to 120 mA/V.
Assuming that IMOD = 60 mA and using the preceding
equation, the MSET voltage is given by
V COMPLIANCE_MAX = VCC – 0.75 ? 4.4 × 0.04 = 2.53 V
V IBIAS = 1.3 V < 2.53 V, which satisfies the requirement.
V MSET =
IMOD (mA)
120 mA/V
=
60
120
= 0 . 5 V
To calculate the headroom at the modulation current pins
(IMODP and IMODN), the voltage has a dc component equal
to VCC, due to the ac-coupled configuration, and a swing equal
to IMOD × 25 ?. For proper operation of the ADN2526,the
voltage at each modulation output pin should be within the
normal operation region shown in Figure 30.
The MSET voltage range can be calculated using the required
IMOD range and the minimum and maximum K values. These
can be obtained from the minimum and maximum curves in
Rev. B | Page 15 of 16
相关PDF资料
PDF描述
ADN2530YCPZ-500R7 IC LASER DRVR 11.3GPBS 16LFCSP
ADN2531ACPZ-R2 IC LASER DRIVER 11.3GBPS 16LFCSP
ADN2830ACPZ32 IC LASR CTRLR 1CHAN 5.5V 32LFCSP
ADN2841ACPZ-48 IC LSR DRVR 2.7GBPS 5.5V 48LFCSP
ADN2847ACPZ-32 IC LSR DRVR 3.3GBPS 3.6V 32LFCSP
相关代理商/技术参数
参数描述
ADN2526XCPZ 制造商:Analog Devices 功能描述:DRIVER
ADN2530 制造商:AD 制造商全称:Analog Devices 功能描述:11.3 Gbps, Active Back-Termination, Differential VCSEL Driver
ADN2530YCPZ-500R7 功能描述:IC LASER DRVR 11.3GPBS 16LFCSP RoHS:是 类别:集成电路 (IC) >> PMIC - 激光驱动器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:60 系列:- 类型:激光二极管驱动器 数据速率:- 通道数:4 电源电压:3.3V 电流 - 电源:- 电流 - 调制:- 电流 - 偏置:- 工作温度:0°C ~ 70°C 封装/外壳:40-TQFN 裸露焊盘 供应商设备封装:40-TQFN EP 包装:托盘 安装类型:表面贴装
ADN2530YCPZ-R2 制造商:AD 制造商全称:Analog Devices 功能描述:11.3 Gbps, Active Back-Termination, Differential VCSEL Driver
adn2530ycpz-reel7 制造商:Analog Devices 功能描述:LASER DRVR VCSEL 11.3GBPS 1CH 16LFCSP - Tape and Reel 制造商:Rochester Electronics LLC 功能描述: