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参数资料
| 型号： | ADN2526ACPZ-R7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | IC LASER DRIVER 11.3GBPS 16LFCSP |
| 标准包装： | 1,500 |
| 类型： | 激光二极管驱动器 |
| 数据速率： | 11.3Gbps |
| 通道数： | 1 |
| 电源电压： | 3 V ~ 3.6 V |
| 电流 - 电源： | 46mA |
| 电流 - 调制： | 80mA |
| 电流 - 偏置： | 100mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-VFQFN 裸露焊盘，CSP |
| 供应商设备封装： | 16-LFCSP-VQ |
| 包装： | 带卷 (TR) |
| 安装类型： | 表面贴装 |
Data Sheet
ADN2526
SPECIFICATIONS
VCC = VCC MIN to VCC MAX , T A = ?40°C to +85°C, 50 ? differential load resistance, unless otherwise noted. Typical values are specified at
T A = 25°C, IMOD 1 = 40 mA, unless otherwise noted.
Table 1.
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
BIAS CURRENT (IBIAS)
Bias Current Range
10
100
mA
Bias Current While ALS Asserted
300
μA
ALS = high
Compliance Voltage 2
0.6
0.6
VCC
VCC
V
V
IBIAS = 100 mA
IBIAS = 10 mA
MODULATION CURRENT (IMODP, IMODN)
Modulation Current Range
Modulation Current While ALS Asserted
Rise Time (20% to 80%) 3, 4
Fall Time (20% to 80%) 3, 4
10
24
24
0.4
80
0.5
32.5
32.5
0.9
mA diff
mA diff
ps
ps
ps rms
R LOAD = 5 ? to 50 ? differential
ALS = high
Deterministic Jitter 3, 5
Pulse Width Distortion 3, 4
Differential |S22|
Compliance Voltage 2
VCC ? 1.1
7.2
2
?10
?14
12
5
VCC + 1.1
ps p-p
ps
dB
dB
V
Includes pulse width distortion
PWD = (|T HIGH – T LOW |)/2
5 GHz < f < 10 GHz, Z 0 = 50 ? differential
f < 5 GHz, Z 0 = 50 ? differential
DATA INPUTS (DATAP, DATAN)
Input Data Rate
11.3
Gbps
NRZ
Differential Input Swing
Differential |S11|
Input Termination Resistance
0.15
?16.8
100
1.6
V p-p diff
dB
?
Differential, ac-coupled
f < 10 GHz, Z 0 = 100 ? differential
Differential
BIAS CONTROL INPUT (BSET)
BSET Voltage to IBIAS Gain
BSET Input Resistance
MODULATION CONTROL INPUT (MSET)
90
1000
mA/V
?
MSET Voltage to IMOD Gain
50
78
100
mA/V
MSET Input Resistance
BIAS MONITOR (IBMON)
IBMON to IBIAS Ratio
1000
10
?
μA/mA
Accuracy of IBIAS to IBMON Ratio
?5.0
?4.0
?2.5
?2
+5.0
+4.0
+2.5
+2
%
%
%
%
10 mA ≤ IBIAS < 20 mA, R IBMON = 1 k?
20 mA ≤ IBIAS < 40 mA, R IBMON = 1 k?
40 mA ≤ IBIAS < 70 mA, R IBMON = 1 k?
70 mA ≤ IBIAS < 100 mA, R IBMON = 1 k?
AUTOMATIC LASER SHUTDOWN (ALS)
V IH
V IL
2.0
0.8
V
V
I IL
I IH
?30
0
+30
200
μA
μA
ALS Assert Time
ALS Negate Time
2
10
μs
μs
Rising edge of ALS to falling edge of IBIAS and
Falling edge of ALS to rise of IBIAS and IMOD
Rev. B | Page 3 of 16
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