参数资料
型号: ADSP-21371KSWZ-2B
厂商: Analog Devices Inc
文件页数: 8/48页
文件大小: 0K
描述: IC DSP 32BIT 266MHZ 208-LQFP
产品培训模块: SHARC Processor Overview
标准包装: 1
系列: SHARC®
类型: 浮点
接口: DAI,DPI
时钟速率: 266MHz
非易失内存: ROM(512 kB)
芯片上RAM: 128kB
电压 - 输入/输出: 3.30V
电压 - 核心: 1.20V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 208-LQFP 裸露焊盘
供应商设备封装: 208-LQFP-EP(28x28)
包装: 托盘
ADSP-21371
PACKAGE INFORMATION
The information presented in Figure 2 provides details about
the package branding for the ADSP-21371 processor. For a
complete listing of product availability, see Ordering Guide on
vvvvvv.x n.n
tppZ-cc
S
ADSP-2137x
a
yyww country_of_origin
Figure 2. Typical Package Brand
Table 9. Package Brand Information
Brand Key
t
Temperature Range
pp
Package Type
Z
RoHS Compliant Part
ccc
See Ordering Guide
vvvvvv.x
Assembly Lot Code
n.n
Silicon Revision
yyww
Date Code
Field Description
MAXIMUM POWER DISSIPATION
See Engineer-to-Engineer Note “Estimating Power Dissipation
for ADSP-2137x SHARC Processors” (EE-319) for detailed
thermal and power information regarding maximum power dis
sipation. For information on package thermal specifications, see
ABSOLUTE MAXIMUM RATINGS
Stresses greater than those listed in Table 10 may cause perma
nent damage to the device. These are stress ratings only;
functional operation of the device at these or any other condi
tions greater than those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Table 10. Absolute Maximum Ratings
Parameter
Rating
Internal (Core) Supply Voltage (VDDINT)
–0.3 V to +1.5 V
External (I/O) Supply Voltage (VDDEXT)
–0.3 V to +4.6 V
Input Voltage –0.5 V to VDDEXT
+0.5 V
Output Voltage Swing –0.5 V to VDDEXT
+0.5 V
Load Capacitance
200 pF
Storage Temperature Range
–65
°C to +150°C
Junction Temperature under Bias
125
°C
ESD SENSITIVITY
ESD (electrostatic discharge) sensitive device.
Charged devices and circuit boards can discharge
without detection. Although this product features
patented or proprietary circuitry, damage may occur
on devices subjected to high energy ESD. Therefore,
proper ESD precautions should be take to avoid
performance degradation or loss of functionality.
Rev. 0
|
Page 16 of 48
|
June 2007
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