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参数资料
| 型号： | AGR09090EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 10/15页 |
| 文件大小： | 661K |
| 代理商： | AGR09090EF |
4
Agere Systems Inc.
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
April 2004
AGR09090EF
Preliminary Data Sheet
Test Circuit Illustrations for AGR09090EF, 921 MHz—960 MHz
A. Schematic, 921 MHz—960 MHz
Parts List:
I Microstrip line: Z1 0.035 in. x 0.066 in.; Z2 0.120 in. x 0.066 in.; Z3 0.475 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.129 in. x 0.100 in.;
Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.;
Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.;
Z17 1.916 in. x 0.050 in.; Z18 0.734 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.086 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.;
Z22 0.208 in. x 0.066 in.; Z23 0.278 in. x 0.066 in.; Z24 0.305 x 0.050
I ATC
chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2: 2.7 pF 100B2R7JW500X; C3: 2.0 pF 100B2R0CW
C4, C5, C11, C12: 12 pF 100B120JW500X; C7: 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14: 4.7 pF 100B4R7CW;
C17: 10 pF 100B100JW500X; C23: 8.2 pF 100A8R2CW.
I Sprague
tantalum surface-mount chip capacitor: C10, C20 10 F, 35 V; C22 22 F, 35 V.
I Murata
0805 size chip capacitor: C8, C18: 0.01 F GRM40X7R103K100AL.
I Kemet
1206 size chip capacitor: C9, C19: 0.1 F C1206104K5RAC7800.
I 1206 size chip resistor: R1 51
, RM73B2B510, R2 1 k, RM73B2B130.
I Kreger
ferrite bead: FB1 2743D19447.
I Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
B. Component Layout, 921 MHz—960 MHz
Figure 2. AGR09090EF Test Circuit, 921 MHz—960 MHz
DUT
R1
C8
C22
Z1
C1
Z2
Z3
Z4
Z5
Z22
C15
Z16
Z18
Z19
Z20
C16
RF
VGG
VDD
RF OUTPUT
Z7
Z10
FB1
C9
C7
C6
C5
C4
C11
C12
Z11
C18
C20
C19
C17
C3
Z17
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C2
C10
R2
Z6
Z8
Z9
Z12
Z13
Z14
INPUT
C21
C13
Z15
Z21
C14
Z23
C23
Z24
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09130E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR1000 | 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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