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参数资料
| 型号： | AGR09090EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 6/15页 |
| 文件大小： | 661K |
| 代理商： | AGR09090EF |
14
Agere Systems Inc.
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
April 2004
AGR09090EF
Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR09090EF
Label Notes:
I M before the part number denotes model program. X before the part number denotes engineering prototype.
I The last two letters of the part number denote wafer technology and package type.
I YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok,
Thailand). XXXXX = five-digit wafer lot number.
I ZZZZZZZ = seven-digit assembly lot number on production parts.
I ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
YYWWLL
ZZZZZZZ
XXXXX
1
2
3
1
2
3
AGERE
AGR09090XF
YYWWLL XXXXX
ZZZZZZZ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09130E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR1000 | 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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