- 您现在的位置：买卖IC网 > PDF目录42888 > AGR09090EF (LSI CORP) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR09090EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 9/15页 |
| 文件大小： | 661K |
| 代理商： | AGR09090EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR09090EF
April 2004
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Table 6. RF Characteristics (865 MHz—895 MHz)
1. Across full cellular band, 865 MHz—895 MHz.
2. Measured according to 3GPP GSM 05.05.
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Reverse Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT =
50 W, IDQ = 700 mA)
GL
—
17.6
—
dB
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 700 mA)
η
—
60
—
%
EDGE Linearity Characterization2
(POUT = 40 W, f = 880 MHz, VDS = 26 V, IDQ = 700 mA)
Modulation Spectrum @ ±400 kHz
——
–60
—
dBc
Modulation Spectrum @ ±600 kHz
——
–72
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 700 mA)
P1dB
—
105
—
W
Input Return Loss
RL
—
–
10
—
dB
Ruggedness
(VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles)
ψ
No degradation in output
power.
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19030EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19045EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19045EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19045EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR09130E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09130EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR09130EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET |
| AGR09180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR1000 | 功能描述:可复位保险丝 10/9.6A 16V 100A RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
发布紧急采购，3分钟左右您将得到回复。