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参数资料
| 型号： | AGR18030EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18030EF |
.
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
AGR18030EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* Across full DCS band, 1.805 GHz—1.880 GHz.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
1
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
—
3
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
GFS
—
2.4
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 100 A)
VGS(TH)
2.8
3.4
4.0
Vdc
Gate Quiescent Voltage (VDS = 26 V, ID = 300 mA)
VGS(Q)
3.0
3.8
4.6
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 0.4 A)
VDS(ON)
—
0.30
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Drain-to-gate Capacitance
(VDS = 26 V, VGS = 0 V, f = 1 MHz)
CRSS
—
0.8
—
pF
Functional Tests* (in Agere Systems Supplied Test Fixture)
Power Gain
(VDS = 26 V, POUT = 15 W, IDQ = 300 mA)
GL
—
15
—
dB
Drain Efficiency
(VDS = 26 V, POUT = 15 W, IDQ = 300 mA)
ˇ
—
30
—
%
EDGE Linearity Characterization
(POUT = 10 W, f = 1.840 GHz, VDS = 26 V, IDQ = 300 mA)
Modulation spectrum @ ±400 kHz
—
–64
—
dBc
Modulation spectrum @ ±600 kHz
—
–71
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 300 mA)
P1dB
—
33
—
W
Input Return Loss
IRL
—
–12
—
dB
Ruggedness
(VDS = 26 V, POUT = 30 W, IDQ = 300 mA,
VSWR = 10:1 [all angles])
No degradation in output
power.
50
(in Supplied Test Fixture)
= 150A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18045E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
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