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参数资料
| 型号： | AGR18030EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 6/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18030EF |
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
AGR18030EF
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 26 V, IDQ = 300 mA, PIN = 25 dBm, CW MEASUREMENT.
Figure 6. Wideband Gain and Return Loss
TEST CONDITIONS:
VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 7. Two Tone Power Gain vs. Output Power
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
1750
1770
1790
1810
1830
1850
1870
1890
1910
1930
1950
FREQUENCY (MHz)Z
G
PS
(d
B)
Z
-25
-20
-15
-10
-5
0
IR
L
(d
B)
Z
IRL
GPS
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
0.1
1.0
10.0
100.0
POUT (W) (PEP)Z
G
PS
(d
B)
Z
IDQ = 200 mA
IDQ = 250 mA
IDQ = 300 mA
IDQ = 350 mA
IDQ = 400 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18045E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
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