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参数资料
| 型号： | AGR18030EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18030EF |
AGR18030EF
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18030EF
A. Schematic
Parts List:
Microstrip line: Z1 0.510 in. x 0.066 in.; Z2 0.364 in. x 0.066 in.; Z3 0.151 in. x 0.066 in.; Z4 0.151 in. x 0.155 in.; Z5 0.085 in. x 0.066 in.;
Z6 0.245 in. x 0.540 in.; Z7 0.182 in. x 0.644 in.; Z8 0.052 in. x 0.390 in.; Z9 0.309 in. x 0.539 in.; Z10 0.102 in. x 0.539 in. to 0.125 in. taper;
Z11 0.454 in. x 0.125 in.; Z12 0.769 in. x 0.066 in.; Z13 0.050 in. x 0.560 in.; Z14 0.050 in. x 0.560 in.
ATC chip capacitors: C1, C9: 8.2 pF, 100B8R2JW500X; C2, C6: 6.8 pF, 100B6R8JW500X.
Vitramon chip capacitors: C3, C7: 22,000 pF.
Sprague tantalum surface-mount chip capacitors: C4, C10: 22 F, 35 V.
Murata chip capacitor: C8: 0.01 F, GRM40X7R103K100AL.
Kemet 1206 chip capacitor: C9: 0.1 F, C1206104K5RAC7800.
Johanson-GigaTrim capacitor: C11: 0.4 pF—2.5 pF, 27281SL.
Fair-Rite ferrite bead: FB1: 2743019447.
Resistor: R1: 12 .
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout
Figure 2. AGR18030EF Test Circuit
DUT
R1
Z13
Z1 C1 Z2
Z3
Z14
RF INPUT
VGG
VDD
C3
C4
C2
C9
C6 C7 C8
C10
1
2
3
PINS: 1. DRAIN, 2. SOURCE, 3. GATE
FB1
Z4
Z5
Z6
C5
Z7
Z12
RF OUTPUT
Z8
C11
Z9
Z10
Z11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18045E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
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