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参数资料
| 型号： | AGR18030EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 7/9页 |
| 文件大小： | 397K |
| 代理商： | AGR18030EF |
AGR18030EF
30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 8. Intermodulation Distortion vs. Output Power
TEST CONDITIONS:
VDD = 26 V, IDQ = 300 mA, fc = 1842.5 MHz, EDGE MODULATION.
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power
-65.0
-60.0
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
0.1
1.0
10.0
100.0
POUT (W) (PEP)Z
IM
D3
(d
Bc
)Z
IDQ = 200 mA
IDQ = 250 mA
IDQ = 350 mA
IDQ = 300 mA
IDQ = 400 mA
0
5
10
15
20
25
30
35
40
45
0.1
1.0
10.0
100.0
POUT (W)
G
PS
(d
B)
,D
RA
IN
EF
FI
CI
EN
CY
(%
)
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
SP
EC
TR
AL
RE
GR
OW
TH
(d
Bc
)Z
400 kHz
600 kHz
GPS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR18045E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:45 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor |
| AGR18045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
| AGR18060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR18060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor |
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