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参数资料
| 型号： | AGR19045EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 4/11页 |
| 文件大小： | 225K |
| 代理商： | AGR19045EF |
2
Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
June 2004
AGR19045EF
Preliminary Data Sheet
Electrical Characteristics
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θJC
1.5
°C/W
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C
PD
115
W
Derate Above 25
°C
—
0.67
W/°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–65, 150
°C
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0V, ID =38A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
1.3
Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
4Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =0.4 A)
GFS
—3.0
—
S
Gate Threshold Voltage (VDS =10V, ID =130 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS =28 V, ID = 400 mA)
VGS(Q)
—3.7
—
Vdc
Drain-source On-voltage (VGS =10V, ID =0.4 A)
VDS(ON)
—0.3
—
Vdc
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| AGR19045EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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