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参数资料
| 型号： | AGR19045EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 6/11页 |
| 文件大小： | 225K |
| 代理商： | AGR19045EF |
4
Agere Systems Inc.
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
June 2004
AGR19045EF
Preliminary Data Sheet
Test Circuit Illustrations for AGR19045EF
A. Schematic
B. Component Layout
Parts List:
■
Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.;
Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.;
Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in.
■
ATC B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF.
■
ATC S case chip capacitor: C21: 0.2 pF
■
Kemet B case chip capacitors: C2, C16: 0.1 F CDR33BX104AKWS. Tantalum capacitor: C17, 1 F, 50 V, T491C.
■
Vitramon 1206: C4, C14: 22000 F.
■
Johanson Giga-Trim variable capacitor C7: 0.4 pF—2.5 pF.
■
Murata 0805: C3, C15: 0.01 F, GRM40X7R103K100AL.
■
Sprague tantalum surface-mount chip capacitor: C1, C18, C19, C23: 22 F, 35 V.
■
Fair-Rite ferrite bead: FB1: 2743019447.
■
Fixed film chip resistor: R1: 12
, 0.25 W, 0.08 x 0.13.
■
PCB etched circuit boards.
■
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
εr = 3.5.
Figure 2. AGR19045EF Test Circuit
DUT
R1
C3
Z13
C6
Z3
Z1
C20
Z7
Z8
Z10
Z11
RF INPUT
VGG
VDD
RF
Z6
Z4
FB1
Z14
C4
C15
3
1
2
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
C23
C12
C14
C13
C1
C2
C5
C22
Z2
C7
Z5
Z9
Z12
OUTPUT
C19
C16
C18
C17
C21
23
1
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19045EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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