- 您现在的位置：买卖IC网 > PDF目录42888 > AGR19045EF (LSI CORP) L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR19045EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 7/11页 |
| 文件大小： | 225K |
| 代理商： | AGR19045EF |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR19045EF
June 2004
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics
Note: ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f)
ZS
(Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
1930 (f1)
2.79 – j8.63
4.94 – j6.00
1960 (f2)
2.64 – j8.20
4.82 – j5.91
1990 (f3)
2.38 – j7.78
4.47 – j5.79
0.1
0.2
0.3
0.4
0.5
0.6
0
.7
0.7
0
.8
0.8
0
.9
0.9
1.0
1
.2
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180±
90
-90
-8
5
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.0
4
0.05
0.0
6
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.1
7
0.18
0.1
9
0.2
1
0.22
0.23
0.24
0.25
0.26
0.27
0
.2
8
0.2
9
0.3
1
0.3
2
0.3
3
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.4
3
0.4
4
0.45
0.4
6
0.47
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
IS
S
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
F
L
E
C
T
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
<
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
<
IN
D
U
C
T
CA
PA
CIT
IV
ER
EA
CT
AN
CE
CO
M
PO
N
EN
T
(-j
X/
Zo
),
O
R
IN
D
U
C
T
IV
E
SU
SC
E
P
T
A
N
C
E
(-
jB
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3
f1
ZL
f1
f3
Z0 = 10
DUT
ZS
ZL
INPUT MATCH
OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
相关PDF资料 |
PDF描述 |
|---|---|
| AGR19045EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19060EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。