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参数资料
| 型号： | AGR19045EF |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | FM-2 |
| 文件页数： | 5/11页 |
| 文件大小： | 225K |
| 代理商： | AGR19045EF |
Agere Systems Inc.
3
Preliminary Data Sheet
AGR19045EF
June 2004
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. RF Characteristics
Parameter
Symbol Min
Typ
Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28 V, VGS =0, f = 1.0MHz)
(This part is internally matched on both the input and output.)
CRSS
—1.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS
14.5
15.0
—
dB
Drain Efficiency
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
—24.8
—
%
Third-order Intermodulation Distortion
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3
measured in a 1.228 MHz integration bandwidth centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3
—
–34.5
—
dBc
Adjacent Channel Power Ratio
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz
and f2 + 885 kHz, referenced to the carrier channel power)
ACPR
—
–49.5
—
dBc
Input Return Loss
(VDD =28Vdc, POUT = 9 W average, 2-Carrier N-CDMA, IDQ =550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—
–10
—
dB
Output Power at 1 dB Gain Compression
(VDD =28V, POUT = 45 W CW, f = 1990 MHz, IDQ =400 mA)
P1dB
45
50
—
W
Ruggedness
(VDD =28V, POUT =45W CW, IDQ = 400 mA, f = 1930 MHz, VSWR = 10:1
[all phase angles])
Ψ
No degradation in output
power.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19090EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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