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参数资料
| 型号： | AGR21125EU |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 3/9页 |
| 文件大小： | 340K |
| 代理商： | AGR21125EU |
AGR21125E
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21125E
A. Schematic
B. Component Layout
Figure 2. AGR21125E Test Circuit
Parts List:
Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.315 in. x 0.065 in.
Z5 0.240 in. x 0.860 in.
Z6 0.050 in. x 0.467 in.
Z7 0.050 in. x 0.367 in.
Z8 0.500 in. x 1.050 in.
Z9 0.248 in. x 0.185 in.
Z10 0.075 in. x 0.320 in.
Z11 0.465 in. x 0.115 in.
Z12 0.075 in. x 0.065 in.
Z13 0.252 in. x 0.065 in.
Z14 0.050 in. x 0.367 in.
WB1, WB2; 10 mil thick, 0.6 in. x 0.18 in.
Fair-Rite ferrite bead: FB1 2743019447.
Vitramon 1206 size chip capacitor:
C3, C9A, C9B, C9C, C9D 22000 pF.
1206 size chip capacitor: 22000 pF
C12A, C12B, C12C, C12D, C13A, C13B.
1206 size chip resistor:
R1 1 k;
R2 560 k;
R3 4.7 .
Taconic ORCER RF-35 board material,
2 oz. copper, 30 mil thickness, εr = 3.5.
ATC chip capacitor: C1 10 pF 100B100JW500X; C5, C14A, C14B, C15A, C15B 5.6 pF100B5R6BW500X;
C6A, C6B 6.8 pF 100B6R8JW500X; C7A, C7B 1.2 pF 100B1R2BW500X; C16 15 pF 100B150JW500X.
Murata 0805 size chip capacitor: C8A, C8B, C8C, C8D 0.01 F GRM40X7R103K100AL.
Sprague tantalum surface-mount chip capacitor: C2, C4, C10A, C10B, C11A, C11B 22 F, T491, 35 V.
Johanson Giga-Trim variable capacitor: C18 0.6 pF to 4.5 pF 27271SL.
DUT
R3
C2
R2
R1
+
C3 C4
+
C5
FB1
Z6
Z1 C1 Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z11
Z12
Z13
C9A
C8A
C7A
C6A
C13A
C12A
C11A
+
C10A
C14A
RF INPUT
VGG
VDD
RF
C16
C15A
C18
OUTPUT
+
1
2
3
C9B
C8B
C7B
C6B
C13B
C12B
C11B
+
C10B
C14B C15B
+
C12D C9D C8D
Z7
C12C C9C C8C
VDD
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
Z14
2
3
1
相关PDF资料 |
PDF描述 |
|---|---|
| AGR21125EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EU | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR26125EF | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR21180EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR21N090EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR26045EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR26125E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET |
| AGR26125EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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