- 您现在的位置：买卖IC网 > PDF目录166212 > AM29DS323DT120 (Advanced Micro Devices, Inc.) 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory PDF资料下载
参数资料
| 型号： | AM29DS323DT120 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），1.8伏的CMOS只，同时作业快闪记忆体 |
| 文件页数： | 12/54页 |
| 文件大小： | 1013K |
| 代理商： | AM29DS323DT120 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页
PRELIMINARY
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 23480
Rev: A Amendment/+3
Issue Date: November 22, 2000
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DS323D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
s Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
s Secured Silicon (SecSi
) Sector
—
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
— 64 Kbyte sector size
s Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
s Package options
— 48-ball FBGA
— 48-pin TSOP
s Top or bottom boot block
s Manufactured on 0.23 m process technology
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
s High performance
— Access time as fast 110 ns
— Program time: 13 s/word typical;
with Accelerate function, 7 s/word typical
s Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
s Minimum 1 million write cycles guaranteed per sector
s 20 Year data retention at 125
°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
s Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
s Supports Common Flash Memory Interface (CFI)
s Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
s Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
s Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
s Any combination of sectors can be erased
s Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
s Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
s WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
s Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DS323DT120EIN | Hex Inverters 14-TSSOP -40 to 85 |
| AM29F017D-120E4C | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120E4E | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120E4I | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120EC | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
| AM29F002BB-120EC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, TSOP32, COM - Trays |
| AM29F002BB-120JCT | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM, T&R - Tape and Reel |
| AM29F002BB-55EC | 制造商:Spansion 功能描述: |
| AM29F002BB-55JF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K x 8bit 55ns 32-Pin PLCC |
发布紧急采购，3分钟左右您将得到回复。