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参数资料
| 型号： | AM29DS323DT120 |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4个M × 8位/ 2米x 16位），1.8伏的CMOS只，同时作业快闪记忆体 |
| 文件页数： | 22/54页 |
| 文件大小： | 1013K |
| 代理商： | AM29DS323DT120 |
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28
Am29DS323D
P R E L I M I NARY
Command Definitions
Table 14.
Am29DS323D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever happens
later.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A20–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
5.
Unless otherwise noted, address bits A20–A11 are don’t cares.
6.
No unlock or command cycles required when bank is in read
mode.
7.
The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information).
8.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
9.
The data is 85h for factory locked and 05h for not factory locked.
10. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
14. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
15. Command is valid when device is ready to read array data or when
Command
Sequence
Cy
c
le
s
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
A
u
to
s
ele
c
t(N
Manufacturer ID
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X00
01
Byte
AAA
555
(BA)AAA
Device ID
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X01
(see
Byte
AAA
555
(BA)AAA
(BA)X02
SecSi
Sector Factory
Protect (Note 9)
Word
4
555
AA
2AA
55
(BA)555
90
(BA)X03
85/05
Byte
AAA
555
(BA)AAA
(BA)X06
Sector Protect Verify
Word
4
555
AA
2AA
55
(BA)555
90
(SA)X02
00/01
Byte
AAA
555
(BA)AAA
(SA)X04
Enter SecSi Sector Region
Word
3
555
AA
2AA
55
555
88
Byte
AAA
555
AAA
Exit SecSi Sector Region
Word
4
555
AA
2AA
55
555
90
XXX
00
Byte
AAA
555
AAA
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Unlock Bypass
Word
3
555
AA
2AA
55
555
20
Byte
AAA
555
AAA
Unlock Bypass Program (Note 11)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 12)
2
BA
90
XXX
00
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
555
Erase Suspend (Note 13)
1
BA
B0
Erase Resume (Note 14)
1
BA
30
CFI Query (Note 15)
Word
1
55
98
Byte
AA
相关PDF资料 |
PDF描述 |
|---|---|
| AM29DS323DT120EIN | Hex Inverters 14-TSSOP -40 to 85 |
| AM29F017D-120E4C | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120E4E | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120E4I | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F017D-120EC | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29F002B-70JC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
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| AM29F002BB-55EC | 制造商:Spansion 功能描述: |
| AM29F002BB-55JF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K x 8bit 55ns 32-Pin PLCC |
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