参数资料
型号: AM29DS323DT120
厂商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4个M × 8位/ 2米x 16位),1.8伏的CMOS只,同时作业快闪记忆体
文件页数: 37/54页
文件大小: 1013K
代理商: AM29DS323DT120
Am29DS323D
41
P R E L I M I NARY
AC CHARACTERISTICS
Figure 18.
Accelerated Program Timing Diagram
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC
tAS
tWPH
tVCS
555h
PA
Read Status Data (last two cycles)
A0h
tCS
Status
DOUT
Program Command Sequence (last two cycles)
RY/BY#
tRB
tBUSY
tCH
PA
Notes:
1. PA = program address, PD = program data, D
OUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
Program Operation Timings
WP#/ACC
tVHH
VHH
VIL or VIH
tVHH
相关PDF资料
PDF描述
AM29DS323DT120EIN Hex Inverters 14-TSSOP -40 to 85
AM29F017D-120E4C 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120E4E 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120E4I 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-120EC 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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