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参数资料
| 型号： | AO3413 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 456K |
| 代理商： | AO3413 |
AO3413
20V P-Channel MOSFET
-15
Features
V
DS = -20V
I
D = -3A
(V
GS = -4.5V)
R
DS(ON) < 80m
(V
GS =- 4.5V)
R
DS(ON) < 100m
(V
GS = -2.5V)
R
DS(ON) < 130m
(V
GS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
t ≤ 10s
70
90
Steady-State
100
125
Steady-State
RθJL
63
80
-15
A
PD
Power Dissipation
A
TA=25°C
TA=70°C
ID
Pulsed Drain Current
B
Maximum
Parameter
Units
-20
±8
°C
-55 to 150
Continuous Drain
Current
A
-3
-2.4
Maximum Junction-to-Lead
C
°C/W
Units
Maximum Junction-to-Ambient
A
RθJA
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
Gate-Source Voltage
Drain-Source Voltage
Parameter
°C/W
Maximum Junction-to-Ambient
A
0.9
°C/W
W
Junction and Storage Temperature Range
TA=70°C
Thermal Characteristics
1.4
Features
V
DS = -20V
I
D = -3A
(V
GS = -4.5V)
R
DS(ON) < 80m
(V
GS =- 4.5V)
R
DS(ON) < 100m
(V
GS = -2.5V)
R
DS(ON) < 130m
(V
GS = -1.8V)
General Description
The AO3413 uses advanced trench technology to
provide excellent R
DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
SOT23
Top View
Bottom View
D
G
S
G
S
D
G
D
S
Rev 9: July 2010
www.aosmd.com
Page 1 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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