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参数资料
| 型号： | AO3413 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 456K |
| 代理商： | AO3413 |
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
5
10
15
20
25
0
1
2
3
4
5
-I
D
(A
)
-V
DS (Volts)
Figure 1: On-Region Characteristics
V
GS=-1.5V
-2.0V
-2.5V
-4.5V
-3.0V
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
-I
D
(A
)
-V
GS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS=-5V
50
70
90
110
130
150
0
2
4
6
8
10
R
D
S
(O
N
)
(m
)
V
GS=-1.8V
V
GS=-2.5V
V
GS=-4.5V
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
ze
d
O
n
-R
e
s
is
ta
n
c
e
V
GS=-2.5V
I
D=-2.6A
V
GS=-4.5V
I
D=-3A
V
GS=-1.8V
I
D=-1A
Rev 9: July 2010
www.aosmd.com
Page 3 of 5
12
0
5
10
15
20
25
0
1
2
3
4
5
-I
D
(A
)
-V
DS (Volts)
Figure 1: On-Region Characteristics
V
GS=-1.5V
-2.0V
-2.5V
-4.5V
-3.0V
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
-I
D
(A
)
-V
GS(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS=-5V
50
70
90
110
130
150
0
2
4
6
8
10
R
D
S
(O
N
)
(m
)
-I
D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS=-1.8V
V
GS=-2.5V
V
GS=-4.5V
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-I
S
(A
)
-V
SD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
ze
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS=-2.5V
I
D=-2.6A
V
GS=-4.5V
I
D=-3A
V
GS=-1.8V
I
D=-1A
40
60
80
100
120
140
160
180
0
2
4
6
8
R
D
S
(O
N
)
(m
)
-V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
D=-3A
25°C
125°C
Rev 9: July 2010
www.aosmd.com
Page 3 of 5
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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