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参数资料
| 型号： | AO3413 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 456K |
| 代理商： | AO3413 |
AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
0
1
2
3
4
5
0
2
4
6
8
10
-V
G
S
(V
o
lt
s
)
Q
g (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
C
a
p
a
c
it
a
n
c
e
(p
F
)
-V
DS (Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.00001
0.001
0.1
10
1000
P
o
w
e
r
(W
)
V
DS=-10V
I
D=-3A
T
J(Max)=150°C
T
A=25°C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-I
D
(A
m
p
s
)
10
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)=150°C
T
A=25°C
100
s
1s
Rev 9: July 2010
www.aosmd.com
Page 4 of 5
12
0
1
2
3
4
5
0
2
4
6
8
10
-V
G
S
(V
o
lt
s
)
Q
g (nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
C
a
p
a
c
it
a
n
c
e
(p
F
)
-V
DS (Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.00001
0.001
0.1
10
1000
P
o
w
e
r
(W
)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.001
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z
θθθθJ
A
N
o
rm
a
li
ze
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
V
DS=-10V
I
D=-3A
Single Pulse
D=T
on/T
T
J,PK=TA+PDM.Z
θJA.RθJA
RθJA=125°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)=150°C
T
A=25°C
0.01
0.10
1.00
10.00
100.00
0.1
1
10
100
-I
D
(A
m
p
s
)
-V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)=150°C
T
A=25°C
100
s
1s
Rev 9: July 2010
www.aosmd.com
Page 4 of 5
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO3413_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET |
| AO3413L | 制造商:AOS 功能描述:MOSFET |
| AO3414 | 功能描述:MOSFET N-CH 20V 4.2A SOT23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO3414_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO3414L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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