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参数资料
| 型号： | AO4407 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 12000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | GREEN, SOIC-8 |
| 文件页数： | 3/5页 |
| 文件大小： | 531K |
| 代理商： | AO4407 |
AO4407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
1
2
3
4
5
6
-I
D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0
5
10
15
20
R
D
S
(O
N
)
(m
)
-I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=-10V
I
D=-12A
V
GS=-5V
I
D=-7A
25°C
125°C
V
DS=-5V
V
GS=-5V
0
20
40
60
80
0
1
2
3
4
5
-I
D
(A
)
-V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=-3.5V
-4V
-6V
-10V
-4.5V
-5V
V
GS=-10V
40
0
20
40
60
80
1
2
3
4
5
6
-I
D
(A
)
V
GS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
5
10
15
20
25
30
0
5
10
15
20
R
D
S
(O
N
)
(m
)
-I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I S
(A
)
-V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
V
GS=-10V
I
D=-12A
V
GS=-5V
I
D=-7A
5
10
15
20
25
30
2
4
6
8
10
R
D
S
(O
N
)
(m
)
-V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS=-5V
V
GS=-5V
I
D=-12A
25°C
125°C
0
20
40
60
80
0
1
2
3
4
5
-I
D
(A
)
-V
DS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS=-3.5V
-4V
-6V
-10V
-4.5V
-5V
V
GS=-10V
Rev 13: July 2010
www.aosmd.com
Page 3 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4407_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407A | 功能描述:MOSFET P-CH -30V -12A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4407A_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4407AL | 制造商:AOS 功能描述:MOSFET |
| AO4407B | 功能描述:MOSFET P-CH 30V 12A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:* 零件状态:过期 标准包装:1 |
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