参数资料
型号: AO4622
厂商: ALPHA AND OMEGA SEMICONDUCTOR
元件分类: JFETs
英文描述: 20 V, 0.023 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: GREEN, SOIC-8
文件页数: 4/9页
文件大小: 251K
代理商: AO4622
AO4622
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.4
494
593
692
830
193
18
0
2
4
6
8
10
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
G
S
(V
o
lt
s
)
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
it
a
n
c
e
(p
F
)
Ciss
Coss
Crss
VDS=10V
ID=7.3A
0
10
20
30
40
50
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r
(W
)
TJ(Max)=150°C
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
I D
(A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
s
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θθθθJ
A
N
o
rm
a
li
z
e
d
T
ra
n
s
ie
n
t
T
h
e
rm
a
l
R
e
s
is
ta
n
c
e
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
10s
10ms
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料
PDF描述
AO6409 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO7410 1700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AOI452A 55 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AON6414A 50 A, 30 V, 0.0114 ohm, N-CHANNEL, Si, POWER, MOSFET
AON7400 26 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AO4622_10 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET
AO4624 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4624_09 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4625 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO4627 功能描述:MOSFET N/P-CH 30V 4.5/3.5A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR