- 您现在的位置：买卖IC网 > PDF目录375333 > AO4708 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | AO4708 |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 3/5页 |
| 文件大小： | 153K |
| 代理商： | AO4708 |
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
10V
3.5V
V
GS
=3V
4V
4.5V
8V
6V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
4
5
6
7
8
9
10
11
12
0
10
20
30
40
50
60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
I
D
=15A
V
GS
=10V
V
GS
=4.5V
4
6
8
10
12
14
16
2
3
4
5
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=15A
25°C
125°C
I
D
=14A
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4709 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4709L | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4710 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4712 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4714 | N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4709 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4709L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4710 | 功能描述:MOSFET N-CH 30V 12.7A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SRFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4710_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4710L | 制造商:Alpha & Omega Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。