- 您现在的位置：买卖IC网 > PDF目录375333 > AO4708 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | AO4708 |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 5/5页 |
| 文件大小： | 153K |
| 代理商： | AO4708 |
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
50
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
I
R
VDS=12V
VDS=24V
0
0.2
0.4
0.6
0.8
1
0
50
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
V
S
(
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
Q
r
0
4
8
12
16
20
I
di/dt=1000A/us
4
5
6
7
8
9
10
11
12
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
t
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
S
I
S
=1A
10A
20A
0
10
20
30
40
50
0
200
400
600
800
1000
1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
r
0
3
6
9
12
15
I
4
6
8
10
12
14
16
18
0
200
400
600
800
1000
1200
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
t
0.0
0.5
1.0
1.5
2.0
2.5
S
di/dt=1000A/us
125oC
125oC
125oC
125oC
125oC
125oC
125oC
125oC
25oC
25oC
25oC
25oC
25oC
25oC
25oC
25oC
Is=20A
Is=20A
Qrr
Irm
trr
Qrr
Irm
trr
S
S
5A
30A
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4709 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4709L | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4710 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4712 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4714 | N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4709 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4709L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4710 | 功能描述:MOSFET N-CH 30V 12.7A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SRFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4710_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4710L | 制造商:Alpha & Omega Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。