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参数资料
| 型号： | AO4720 |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 2/4页 |
| 文件大小： | 135K |
| 代理商： | AO4720 |
AO4720
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
V
DS
=30V, V
GS
=0V
0.1
20
0.1
2
T
J
=125°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
Gate Threshold Voltage
On state drain current
1.3
120
1.62
V
A
9.3
13.8
14
37
0.40
11.0
17.3
17.5
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
0.5
5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1267
308
118
1.3
1600
pF
pF
pF
2.0
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
21
10.4
3.0
3.6
5.2
3.8
21.2
4.4
11.2
10.5
30
14
nC
nC
nC
nC
ns
ns
ns
ns
17
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Total Gate Charge
Total Gate Charge
Gate Source Charge
V
GS
=10V, V
DS
=15V, I
D
=13A
Gate Drain Charge
Turn-On DelayTime
V
GS
=0V, V
DS
=15V, f=1MHz
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.2
,
R
GEN
=3
m
V
GS
=4.5V, I
D
=11A
V
DS
=5V, I
D
=13A
I
S
=1A,V
GS
=0V
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=13A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
Zero Gate Voltage Drain Current
mA
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=13A, dI/dt=300A/
μ
s
I
D
=250uA, V
GS
=0V
I
F
=13A, dI/dt=300A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
provides a single pulse rating.
F. The power dissipation and current rating is based on the t
≤
10s junction to ambient thermal resistance rating.
Rev1: May. 2007
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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