参数资料
型号: AON6244
厂商: Alpha & Omega Semiconductor Inc
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N CH 60V 85A DFN5X6
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 85A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.7 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 64nC @ 10V
输入电容 (Ciss) @ Vds: 4610pF @ 30V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(5x6)
包装: 标准包装
其它名称: 785-1336-6
AON6244
60V N-Channel MOSFET
General Description
Product Summary
The AO6244 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R DS(ON) and Crss.In addition,switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
DFN5X6
Top View
Bottom View
1
2
3
V DS
I D (at V GS =10V)
R DS(ON) (at V GS =10V)
R DS(ON) (at V GS =4.5V)
100% UIS Tested
100% R g Tested
Top View
8
7
6
60V
85A
< 4.7m ?
< 6.2m ?
D
4
PIN1
Absolute Maximum Ratings T A =25°C unless otherwise noted
5
G
S
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Maximum
60
±20
Units
V
V
Continuous Drain
Current G
Pulsed Drain Current C
T C =25°C
T C =100°C
I D
I DM
85
59
200
A
Continuous Drain
Current
Avalanche Current
C
T A =25°C
T A =70°C
I DSM
I AS , I AR
15
12
65
A
A
Avalanche energy L=0.1mH C
E AS , E AR
211
mJ
Power Dissipation
Power Dissipation
B
A
T C =25°C
T C =100°C
T A =25°C
T A =70°C
P D
P DSM
83
33
2.3
1.5
W
W
Junction and Storage Temperature Range
T J , T STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
R θ JA
R θ JC
14
40
1
17
55
1.5
°C/W
°C/W
°C/W
Rev 0: July 2011
www.aosmd.com
Page 1 of 6
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