- 您现在的位置：买卖IC网 > Datasheet目录394 > AON6244 (Alpha & Omega Semiconductor Inc)MOSFET N CH 60V 85A DFN5X6 Datasheet资料下载
参数资料
| 型号： | AON6244 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 85A DFN5X6 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.7 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 64nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4610pF @ 30V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（5x6） |
| 包装： | 标准包装 |
| 其它名称： | 785-1336-6 |
AON6244
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
60
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =60V, V GS =0V
V DS =0V, V GS =±20V
T J =55°C
1
5
±100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS , I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =20A
T J =125°C
1.5
200
2
3.8
6.9
2.5
4.7
8.5
V
A
m ?
V GS =4.5V, I D =20A
4.8
6.2
m ?
g FS
Forward Transconductance
V DS =5V, I D =20A
150
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.68
1
V
I S
Maximum Body-Diode Continuous Current G
85
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
3070
3838
4610
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =30V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
290
4
0.5
415
14.5
1
540
25
1.5
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
40
52
64
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
Q gd
Gate Drain Charge
t D(on)
Turn-On DelayTime
t r
Turn-On Rise Time
t D(off)
Turn-Off DelayTime
t f
Turn-Off Fall Time
V GS =10V, V DS =30V, I D =20A
V GS =10V, V DS =30V, R L =1.5 ? ,
R GEN =3 ?
16
21
13.5
3
11
3
34
4
30
nC
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/ μ s
14
21.5
28
ns
Q rr
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/ μ s
60
87.5
115
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150 ° C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P D is based on T J(MAX) =150 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C. Ratings are based on low frequency and duty cycles to keep
initial T J =25 ° C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
www.aosmd.com
Page 2 of 6
相关PDF资料 |
PDF描述 |
|---|---|
| AON6918 | MOSF 2N CH 25V 60/85A DFN5X6A |
| AON7421 | MOSF P CH 20V 50A DFN3.3X3.3EP |
| AON7423 | MOSF P CH 20V 50A DFN3.3X3.3EP |
| AON7426 | MOSFET N-CH 30V 18A DFN3X3 |
| AON7460 | MOS N CH 300V 4A DFN3X3A_EP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AON6246 | 功能描述:MOSFET N CH 60V 80A DFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON6248 | 制造商:Alpha & Omega Semiconductor 功能描述:DUAL N 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 60V 17.5A 8DFN |
| AON6250 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:150V N-Channel MOSFET |
| AON6260 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:DFN 5X6 PACKAGE MARKING DESCRIPTION |
| AON6260L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:DFN 5X6 PACKAGE MARKING DESCRIPTION |
发布紧急采购，3分钟左右您将得到回复。