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参数资料
| 型号： | AON7403 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 30 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, GREEN, DFN-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 225K |
| 代理商： | AON7403 |
AON7403
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.7
-2.2
-3
V
ID(ON)
-80
A
14
18
TJ=125°C
20
25
26
36
gFS
21
S
VSD
-0.7
-1
V
IS
-3
A
Ciss
1130
1400
pF
Coss
240
pF
Crss
155
pF
Rg
5.8
8
Qg
18
24
nC
Qgs
5.5
nC
Qgd
3.3
nC
tD(on)
8.7
ns
tr
8.5
ns
tD(off)
18
ns
tf
7ns
trr
12
16
ns
Qrr
26
nC
150
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON)
m
VGS=0V, VDS=-15V, f=1MHz
Input Capacitance
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-8A
Gate Drain Charge
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.8,
RGEN=3
Turn-Off Fall Time
Turn-On DelayTime
VGS=-5V, ID=-5A
IS=-1A,VGS=0V
VDS=-5V, ID=-10A
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
A
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/s
Body Diode Reverse Recovery Time
VGS=-10V, ID=-8A
Reverse Transfer Capacitance
IF=-8A, dI/dt=500A/s
Gate Threshold Voltage
VDS=VGS ID=-250A
Drain-Source Breakdown Voltage
On state drain current
ID=-250A, VGS=0V
VGS=-10V, VDS=-5V
VDS=-30V, VGS=0V
VDS=0V, VGS= ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The Power
dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev2: Feb 2010
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AON7403_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AON7403L | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AON7403L_001 | 功能描述:MOSFET P-CH 30V 11A 8DFN 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET P 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:11A（Ta），29A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:18 毫欧 @ 8A，10V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:24nC @ 15V 不同 Vds 时的输入电容（Ciss）:1400pF @ 15V 功率 - 最大值:3.1W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-PowerSMD，扁平引线 供应商器件封装:8-DFN（3x3） 标准包装:1 |
| AON7404 | 功能描述:MOSFET N-CH 20V 40A DFN3X3EP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON7405 | 功能描述:MOSF P CH 30V 50A DFN3.3X3.3EP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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