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参数资料
| 型号： | AOT1606L |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 178A TO220 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 178A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.3 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 102nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 其它名称： | 785-1411-5 |
AOT1606L/AOB1606L
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
60
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =60V, V GS =0V
V DS =0V, V GS = ±20V
T J =55°C
1
5
100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS , I D =250 μΑ
V GS =10V, V DS =5V
V GS =10V, I D =20A
TO220
V GS =10V, I D =20A
T J =125°C
2.5
310
3.1
5.5
9.4
3.7
6.3
10.8
V
A
m ?
TO263
5.2
6
m ?
g FS
Forward Transconductance
V DS =5V, I D =20A
53
S
V SD
Diode Forward Voltage
I S =1A, V GS =0V
0.7
1
V
I S
Maximum Body-Diode Continuous Current G
178
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
2980
3735
4500
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =25V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
605
40
1.6
872
69
3.2
1140
98
4.8
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Q gs
Q gd
t D(on)
t r
t D(off)
t f
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =30V, I D =20A
V GS =10V, V DS =30V, R L =1.5 ? ,
R GEN =3 ?
68
85
19
24
18
31
60
14
102
nC
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/ μ s
33
48
63
ns
Q rr
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/ μ s
280
411
540
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150 ° C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175 ° C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX) =175 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 ° C. Ratings are based on low frequency and duty cycles to keep
initial T J =25 ° C. Maximum UIS current limited by test equipment.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =175 ° C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2011
www.aosmd.com
Page 2 of 6
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