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| 型号： | AOW480 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 15A TO262 |
| 标准包装： | 50 |
| 系列： | SDMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 140nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7820pF @ 40V |
| 功率 - 最大： | 1.9W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
AOW480
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
80
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =80V, V GS =0V
V DS =0V, V GS = ±25V
T J =55°C
10
50
100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =5V , I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =20A
V GS =7V, I D =20A
T J =125°C
2
500
2.8
3.7
6.1
4
4.5
7.3
V
A
m ?
4.2
5.5
m ?
g FS
Forward Transconductance
V DS =5V, I D =20A
60
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.6
1
V
I S
Maximum Body-Diode Continuous Current
180
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
5200
6520
7820
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =40V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
570
185
0.3
810
310
0.64
1060
430
1
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
92
116
140
nC
Q gs
Q gd
Gate Source Charge
Gate Drain Charge
V GS =10V, V DS =40V, I D =20A
24
23
30
38
36
53
nC
nC
t D(on)
Turn-On DelayTime
31.5
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =40V, R L =2 ? ,
R GEN =3 ?
33
46
17.5
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/ μ s
20
28
36
ns
Q rr
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/ μ s
90
132
170
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150 ° C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175 ° C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX) =175 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 ° C. Ratings are based on low frequency and duty cycles to keep
initial T J =25 ° C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =175 ° C. The SOA curve provides a single pulse rating.
G. The maximum current is package limited .
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2011
www.aosmd.com
Page 2 of 7
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