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参数资料
型号： AP602-F
厂商： TRIQUINT SEMICONDUCTOR INC
元件分类： 放大器
英文描述： 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14
文件页数： 11/11页
文件大小： 888K
代理商： AP602-F
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 9 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP602 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended
circuit configurations shown previously in this datasheet have the device operating with a 80 mA as the quiescent current (ICQ).
This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the
efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade
the device’s efficiency. Measured data shown in the plots below represents the AP602 measured and configured for 2.14 GHz
applications. It is expected that variation of the bias current for other frequency applications will produce similar performance
results.
Icq
(mA)
R2
(ohms)
VPD
(V)
PIN_VPD
(V)
20
6.00k
5
2.53
40
2.76k
5
2.61
60
1.80k
5
2.67
80
1.33k
5
2.73
100
1.05k
5
2.79
120
859
5
2.84
140
723
5
2.89
160
621
5
2.94
Thermal Rise vs. Output Power vs. Icq
Vcc = 28V
0
20
40
60
80
17
19
21
23
25
27
29
Output Power (dBm)
Thermal
Rise
(
C)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
See note 6
C22
0.5 pF
See note 5
See note 4
See note 3
V
BIAS
V
PD
GND
V
CC
C7
100pF
W = .030”
L = .980”
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
-65
-60
-55
-50
-45
-40
-35
19
21
23
25
27
29
Average Output Power (dBm)
ACLR1
(dBc
)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
0
50
100
150
200
19
21
23
25
27
29
Average Output Power (dBm)
Co
ll
e
ct
or
C
u
rr
en
t
(m
A)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
0
5
10
15
20
25
30
19
21
23
25
27
29
Average Output Power (dBm)
C
o
llector
E
ffic
iency
(%)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
11
12
13
14
15
16
20
24
28
32
36
Output Power (dBm)
Gain
(dB)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
20
24
28
32
36
8
12162024
Input Power (dBm)
Output
Powe
r(dBm
)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 C
0
10
20
30
40
50
20
24
28
32
36
Output Power (dBm)
Col
lector
Effic
iency
(%)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
OIP3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
30
35
40
45
50
55
24
26
28
30
32
34
Output Power, PEP (dBm)
OIP3
(dBm)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
IMD3 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
-80
-70
-60
-50
-40
-30
24
26
28
30
32
34
Output Power, PEP (dBm)
IM
D
3
(dBc)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, f = 1 MHz, Vcc = 28V, 25 C
-80
-70
-60
-50
-40
-30
24
26
28
30
32
34
Output Power, PEP (dBm)
IM
D
5
(dBc)
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
1000 pF
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