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参数资料
| 型号： | AP602-F |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14 |
| 文件页数： | 2/11页 |
| 文件大小： | 888K |
| 代理商： | AP602-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 10 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2320-2380 MHz WiBro Application Circuit
Typical WCDMA Performance at 25
°C
at an output power of +27 dBm
Frequency
2350 MHz
Total Output Power
+27 dBm
Power Gain
13 dB
ACLR
-49 dBc
Operating Current, Icc
110 mA
Collector Efficiency
15.8 %
Output P1dB
+36 dBm
Quiescent Current, Icq
80 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C3 is placed at 0.050” (5.1
° @ 2.35 GHz) from the edge of the AP602 (U1).
4. The center of C28 is placed at 0.130” (13.3
° @ 2.35 GHz) from the edge of the AP602 (U1).
5. The center of C29 is placed at 0.110” (11.3
° @ 2.35 GHz) from the center of C28.
6. The center of C30 is placed at 0.165” (16.9
° @ 2.35 GHz) from the center of C29.
7. The center of C31 is placed at 0.110” (11.3
° @ 2.35 GHz) from the center of C30.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
2320-2380 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
9
10
11
12
13
14
20
24
28
32
36
Output Power (dBm)
Gain
(dB)
2320 MHz
2350 MHz
2380 MHz
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
0
10
20
30
40
50
60
20
24
28
32
36
Output Power (dBm)
Colle
ctor
Ef
ficien
cy
(%)
2320 MHz
2350 MHz
2380 MHz
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
-65
-60
-55
-50
-45
-40
19
21
23
25
27
29
Average Output Power (dBm)
A
CLR1
(
dBc)
2320 MHz
2350 MHz
2380 MHz
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
80
90
100
110
120
130
140
19
21
23
25
27
29
Average Output Power (dBm)
Colle
ctor
Cu
rrent
(
m
A)
2320 MHz
2350 MHz
2380 MHz
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
0
5
10
15
20
25
19
21
23
25
27
29
Average Output Power (dBm)
Collec
tor
Eff
icienc
y
(%)
2320 MHz
2350 MHz
2380 MHz
V
BI
AS
V
PD
GND
V
CC
C7
1000pF
C3
2pF
See note 3
22pF
C28
0.2pF
See note 4
C29
0.8pF
See note 5
C30
1.1pF
See note 6
C31
1.2pF
See note 7
C21
22pF
C28 C29
C31
C30
22pF
W = .030”
L = .590”
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