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参数资料
| 型号： | AP602-F |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14 |
| 文件页数： | 6/11页 |
| 文件大小： | 888K |
| 代理商： | AP602-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 4 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
869-960 Application Circuit (AP602-PCB900)
Typical WCDMA Performance at 25
°C
at a channel power of +27 dBm
Frequency
940 MHz
W-CDMA Channel Power
+27 dBm
Power Gain
15.5 dB
Input Return Loss
11 dB
Output Return Loss
6.4 dB
ACLR
-50 dBc
IMD3 @ +27 dBm PEP
-50 dBc
Operating Current, Icc
103 mA
Collector Efficiency
17 %
Output P1dB
+35.7 dBm
Quiescent Current, Icq
80 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. C20 is not required in the final design if there is no DC signal present at the output of the
amplifier circuit.
4. The center of C24 is placed at 0.280” (11.5
° @ 940 MHz) from the edge of the AP602 (U1).
5. The center of L10 is placed at 0.570” (23.4
° @ 940 MHz) from the edge of the AP602 (U1).
6. The center of C19 is placed at 0.050” (2.1
° @ 940 MHz) the center of L10.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
13
14
15
16
17
18
0.8
0.84
0.88
0.92
0.96
1
Frequency (GHz)
Gain
(
d
B)
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
1
1.05
1.1
Frequency (GHz)
S1
1,
S
2
(
d
B
)
S11
S22
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 C
0
10
20
30
40
50
18
22
26
30
34
Output Power (dBm)
Collector
Efficiency
(
%
)
920 MHz
940 MHz
960 MHz
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc= 28V, Icq = 40mA, 25
oC
-62
-58
-54
-50
-46
-42
18
20
22
24
26
28
Output Power (dBm)
A
C
L
R1
(
d
Bc
)
869MHz
880MHz
894MHz
920MHz
940MHz
960MHz
WCDMA 3GPP TM 1+64 DPCH;
PAR = 8.6 @0.01%
60% clipping, Ch. BW = 3.84 MHz;
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 80 mA Icq, 25 C
-80
-70
-60
-50
-40
22
24
26
28
30
32
Output Power, PEP (dBm)
IM
D
(
d
Bc
)
IMD3L
IMD3U
IMD5
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 C
0
5
10
15
20
25
18
20
22
24
26
28
Average Output Power (dBm)
C
o
llect
or
Effic
iency
(%)
920 MHz
940 MHz
960 MHz
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
V
BI
AS
V
PD
GND
V
CC
See note 4
2 Ohm
C7
1000pF
C24 L3
C30
L10
W = .030”
L = 1.570”
C15
100pF
C30
100pF
L10
8.2 nH
See note 5
C19
0.4 pF
See note 6
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