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参数资料
型号： AP602-F
厂商： TRIQUINT SEMICONDUCTOR INC
元件分类： 放大器
英文描述： 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14
文件页数： 8/11页
文件大小： 888K
代理商： AP602-F
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 6 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25
°C at an
output power of +27 dBm
Frequency
2015 MHz
Total Output Power
+27 dBm
Power Gain
13.7 dB
Input Return Loss
12 dB
Output Return Loss
8.5 dB
IMD3 @ +27 dBm PEP
-44 dBc
Operating Current, Icc
110 mA
Collector Efficiency
16.5 %
Output P1dB
+36 dBm
Quiescent Current, Icq
80 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.3
° @ 2015 MHz) from the center of C2.
4. The center of C2 is placed at 0.135” (11.8
° @ 2015 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.530” (50.9
° @ 2015 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
10
11
12
13
14
15
28
30
32
34
36
38
Output Power (dBm)
Gain
(dB)
-40 C
25 C
85 C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 C
-25
-20
-15
-10
-5
0
1.96
1.98
2
2.02
2.04
2.06
2.08
Frequency (GHz)
S11,
S22
(d
B)
S11
S22
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
0
10
20
30
40
50
20
24
28
32
36
Output Power (dBm)
C
o
lle
ctor
Efficie
n
cy
(%
)
-40 C
25 C
85 C
ACLR vs. Output Power vs. Icq
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
-56
-52
-48
-44
-40
16
18
20
22
24
26
Average Output Power (dBm)
ACLR
(dBc)
Icq = 80mA
Icq=100mA
3C-TDSCDMA, PAR = 9.6 dB
@0.01% prob, BW = 1.28MHz,
Sample clk = 32 MHz
IQ Mod Filter = 2.1 MHz
Efficiency vs. Output Power
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
0
2
4
6
8
10
16
18
20
22
24
26
Average Output Power (dBm)
C
o
llect
or
Effic
iency
(%)
IMD vs. Output Power
CW 2-tone signal, 2015 MHz, f = 1 MHz, 28V, 80 mA Icq, 25 C
-80
-70
-60
-50
-40
22
24
26
28
30
32
Output Power, PEP (dBm)
IM
D
(
d
Bc
)
IMD3L
IMD3U
IMD5
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
C7
1000pF
C30
2.4pF
See note 5
C2
2.7pF
See note 4
V
BI
A
S
V
PD
GN
D
V
CC
4.7 nH
See note 3
L3
C7
100pF
W = .030”
L = .980”
C27
10pF
1000pF
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