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参数资料
| 型号： | AP6680GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 81K |
| 代理商： | AP6680GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=11.5A
-
11
mΩ
VGS=4.5V, ID=9.5A
-
18
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=11.5A
-
30
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= ± 25V
-
±100
nA
Qg
Total Gate Charge
2
ID=11.5A
-
16.8
-
nC
Qgs
Gate-Source Charge
VDS=15V
-
4.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
8
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8.9
-
ns
tr
Rise Time
ID=1A
-
7.3
-
ns
td(off)
Turn-off Delay Time
RG=5.5Ω,VGS=10V
-
25.6
-
ns
tf
Fall Time
RD=10Ω
-
18.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450
-
pF
Coss
Output Capacitance
VDS=25V
-
285
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.3V
-
1.92
A
VSD
Forward On Voltage
2
Tj=25℃, IS=3.5A, VGS=0V
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP6680GM
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