参数资料
型号: AP6680GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, SOP-8
文件页数: 3/6页
文件大小: 81K
代理商: AP6680GM
AP6680GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
10
20
30
40
01
12
23
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T C =150
o C
10V
8.0V
6.0V
4.0V
V GS =3.0V
0
10
20
30
40
50
011223
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T C =25
o C
10V
8.0V
6.0V
4.0V
V GS =3.0V
0.2
0.8
1.4
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
R
DS
(ON)
I D =11.5A
V GS =10V
0
20
40
60
80
246
8
10
12
V GS (V)
R
DS
(ON)
(m
ΩΩΩΩ
)
I D =11.5A
T C =25
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