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参数资料
| 型号： | AP6680GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 6/6页 |
| 文件大小： | 81K |
| 代理商： | AP6680GM |
AP6680GM
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
td(on)
tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
5V
QGS
QGD
QG
Charge
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
I
D
I
G
1~ 3 mA
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
10 v
D
G
S
VDS
VGS
RG
RD
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6680SGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6681GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, SO-8 Compatible |
| AP6683GYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6-6930-1 | 制造商:Sensata Technologies 功能描述:AP6-6930-1 /Pole # 1 /Prod Family: 0202 |
| AP6-7062-202 | 制造商:Sensata Technologies 功能描述:AP6-7062-202 /Pole # 1 /Prod Family: 0202 |
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