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参数资料
| 型号： | AP6680GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 5/6页 |
| 文件大小： | 81K |
| 代理商： | AP6680GM |
AP6680GM
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
1
1.5
2
2.5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS
(t
h
)(V
)
0
3
6
9
12
15
0
10
203040
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =11.5A
V DS =15V
10
100
1000
10000
1
7
13
19
25
31
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
0
0.4
0.8
1.2
1.6
V SD (V)
I
S(A
)
Tj=25
o C
Tj=150
o C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6680SGYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP6681GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, SO-8 Compatible |
| AP6683GYT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6-6930-1 | 制造商:Sensata Technologies 功能描述:AP6-6930-1 /Pole # 1 /Prod Family: 0202 |
| AP6-7062-202 | 制造商:Sensata Technologies 功能描述:AP6-7062-202 /Pole # 1 /Prod Family: 0202 |
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