参数资料
型号: APA600-FGG676I
厂商: Microsemi SoC
文件页数: 118/178页
文件大小: 0K
描述: IC FPGA PROASIC+ 600K 676-FBGA
标准包装: 40
系列: ProASICPLUS
RAM 位总计: 129024
输入/输出数: 454
门数: 600000
电源电压: 2.3 V ~ 2.7 V
安装类型: 表面贴装
工作温度: -40°C ~ 85°C
封装/外壳: 676-BGA
供应商设备封装: 676-FBGA(27x27)
ProASICPLUS Flash Family FPGAs
2- 34
v5.9
Table 2-22 DC Electrical Specifications (VDDP = 2.5 V ±0.2V)
Symbol
Parameter
Conditions
Commercial/Industrial/
Military/MIL-STD-8831, 2
Min.
Typ.
Max.
Units
VOH
Output High Voltage
High Drive (OB25LPH)
Low Drive (OB25LPL)
IOH = –6 mA
IOH = –12 mA
IOH = –24 mA
IOH = –3 mA
IOH = –6 mA
IOH = –8 mA
2.1
2.0
1.7
2.1
1.9
1.7
V
VOL
Output Low Voltage
High Drive (OB25LPH)
Low Drive (OB25LPL)
IOL = 8 mA
IOL = 15 mA
IOL = 24 mA
IOL = 4 mA
IOL = 8 mA
IOL = 15 mA
0.2
0.4
0.7
0.2
0.4
0.7
V
VIH
3
Input High Voltage
1.7
VDDP + 0.3
V
VIL
4
Input Low Voltage
–0.3
0.7
V
RWEAKPULLUP Weak Pull-up Resistance
(OTB25LPU)
VIN 1.25 V
6
56
k
Ω
HYST
Input Hysteresis Schmitt
0.3
0.35
0.45
V
IIN
Input Current
with pull up (VIN = GND)
–240
– 20
A
without pull up (VIN = GND or VDD)
–10
10
A
IDDQ
Quiescent Supply Current
(standby)
Commercial
VIN = GND
5 or V
DD
Std.
5.0
15
mA
IDDQ
Quiescent Supply Current
(standby)
Industrial
VIN = GND
5 or V
DD
Std.
5.0
20
mA
IDDQ
Quiescent Supply Current
(standby)
Military/MIL-STD-883
VIN = GND
5 or V
DD
Std.
5.0
25
mA
IOZ
Tristate Output Leakage Current VOH = GND or VDD
Std.
–10
10
A
IOSH
Output Short Circuit Current High
High Drive (OB25LPH)
Low Drive (OB25LPL)
VIN = VSS
–120
–100
mA
Notes:
1. All process conditions. Commercial/Industrial: Junction Temperature: –40 to +110°C.
2. All process conditions. Military: Junction Temperature: –55 to +150°C.
3. During transitions, the input signal may overshoot to VDDP +1.0V for a limited time of no larger than 10% of the duty cycle.
4. During transitions, the input signal may undershoot to -1.0V for a limited time of no larger than 10% of the duty cycle.
5. No pull-up resistor.
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