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参数资料
型号： APT40GT60BR
厂商： MICROSEMI POWER PRODUCTS GROUP
元件分类： IGBT 晶体管
英文描述： 80 A, 600 V, N-CHANNEL IGBT, TO-247
封装： TO-247, 3 PIN
文件页数： 2/6页
文件大小： 188K
代理商： APT40GT60BR
052-6222
Rev
C
1
1-
2008
Dynamic Characteristic
APT40GT60BR
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
-
2190
-
pF
C
oes
Output Capacitance
-
220
-
C
res
Reverse Transfer Capacitance
-
130
-
V
GEP
Gate-to-Emitter Plateau Voltage
Gate Charge
V
GE = 15V
V
CE= 300V
I
C = 40A
-
8.0
-
V
Q
g
Total Gate Charge 3
-
200
-
nC
Q
ge
Gate-Emitter Charge
-
12
-
Q
gc
Gate-Collector Charge
-
86
-
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 5Ω , VGE = 15V, L
= 100μH, V
CE= 600V
160
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 40A
R
G = 5Ω
T
J = +25°C
-12
-
ns
t
r
Current Rise Time
-
36
-
t
d(off)
Turn-Off Delay Time
-
124
-
t
f
Current Fall Time
-
55
-
E
on1
Turn-On Switching Energy 4
--
-
μJ
E
on2
Turn-On Switching Energy 5
-
945
-
E
off
Turn-Off Switching Energy 6
-
828
-
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 400V
V
GE = 15V
I
C = 40A
R
G = 5Ω
T
J = +125°C
-12
-
ns
t
r
Current Rise Time
-
33
-
t
d(off)
Turn-Off Delay Time
-
165
-
t
f
Current Fall Time
-
58
-
E
on1
Turn-On Switching Energy 4
--
-
μJ
E
on2
Turn-On Switching Energy 5
-
1342
-
E
off
Turn-Off Switching Energy 6
-
1150
-
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction to Case (IGBT)
-
0.36
°C/W
R
θJC
Junction to Case (DIODE)
-
N/A
W
T
Package Weight
-
6.1
-
g
Torque
Terminals and Mounting Screws
-
10
inlbf
-
1.1
Nm
V
Isolation
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
2500
-
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance not including gate driver impedance.
Thermal and Mechanical Characteristics
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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