- 您现在的位置：买卖IC网 > PDF目录36713 > APT40GT60BR (MICROSEMI POWER PRODUCTS GROUP) 80 A, 600 V, N-CHANNEL IGBT, TO-247 PDF资料下载
参数资料
| 型号： | APT40GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 188K |
| 代理商： | APT40GT60BR |
052-6222
Rev
C
1
1-
2008
APT40GT60BR
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
T
J
= 125°C
Collector Current
CollectorVoltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125°C
CollectorVoltage
Collector Current
Gate Voltage
Switching Energy
0
t
d(off)
10%
t
f
90%
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
APT30DQ60
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
Emitter
Collector
相关PDF资料 |
PDF描述 |
|---|---|
| APT40M35JVR | 93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M42JN | 86 A, 400 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M70B2VFR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M40LVFRG | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT40M70LVFR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40M35JVFR | 功能描述:MOSFET N-CH 400V 93A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT40M35JVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M42BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 400V V(BR)DSS | 95A I(D) |
发布紧急采购，3分钟左右您将得到回复。